simple drive requirement bv dss -20v small package outline r ds(on) 97m surface mount device i d - 3.3a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w -55 to 150 1.38 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current 3 , v gs @ 4.5v thermal data parameter total power dissipation operating junction temperature range storage temperature range continuous drain current 3 , v gs @ 4.5v -2.7 pulsed drain current 1 -15 AP2301AGN-HF rating - 20 + 8 -3.3 advanced power mosfets from apec provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. the sot-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s d g s sot-23 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
ap2301agn-h f electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-3a - - 97 m v gs =-2.5v, i d =-2.6a - - 130 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.3 - -1 v g fs forward transconductance v ds =-5v, i d =-3a - 10 - s i dss drain-source leakage current v ds =-16v, v gs =0v - - -10 ua i gss gate-source leakage v gs = + 8v, v ds =0v - - + 100 na q g total gate charge i d =-3a - 8.5 21 nc q gs gate-source charge v ds =-10v - 1.2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3 - nc t d(on) turn-on delay time v ds =-10v - 10 - ns t r rise time i d =-1a - 20 - ns t d(off) turn-off delay time r g =3.3 -27- ns t f fall time v gs =-5v - 22 - ns c iss input capacitance v gs =0v - 660 1470 pf c oss output capacitance v ds =-10v - 135 pf c rss reverse transfer capacitance f=1.0mhz - 120 - pf r g gate resistance f=1.0mhz - 7.2 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-0.8a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-3a, v gs =0v, - 24 - ns q rr reverse recovery charge di/dt=100a/s - 11 - nc product specification 2 of 2 sales@twtysemi.com http://www.twtysemi.com 4008-318-123
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